| 비교 | 그림 | 부분 # | 제조사 | 기술 | 재고 | 사양서 | RoHS | 소스 전압에 드레인 (Vdss) | 전류 - 25 ° C에서 연속 드레인 (Id) | 이드의 Vgs @ RDS에서 (최대) | 아이디 @ VGS (일) (최대) | 게이트 차지 (Qg) (최대) @ Vgs | 입력 커패시턴스 (Ciss) (최대) @ Vds | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Vgs (최대) | 포장 | FET 특징 | 무연 여부 / RoHS 준수 여부 | 수분 민감도 (MSL) | 다른 이름들 | 기본 제품 번호 | 패키지 | 상세 설명 | 연속 | 과학 기술 | 작동 온도 | 실장 형 | 패키지 / 케이스 | 제조업체 장치 패키지 | 전력 소비 (최대) | FET 유형 | 수량 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQPF19N20T | onsemi | MOSFET N-CH 100V 11.8A TO220F | 유품4467 pcs | FQPF19N20T.pdf | 100 V | 11.8A (Tc) | 150mOhm @ 5.9A, 10V | 5V @ 250µA | 40 nC @ 10 V | 1600 pF @ 25 V | 10V | ±30V | - | - | - | - | - | FQPF1 | Tube | - | QFET® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-3 | 50W (Tc) | N-Channel | ||||
| DMN3009SK3-13 | Diodes Incorporated | MOSFET N-CHANNEL 30V 80A TO252 | 유품130020 pcs | DMN3009SK3-13.pdf | 30 V | 80A (Tc) | 5.5mOhm @ 30A, 10V | 2.5V @ 250µA | 42 nC @ 10 V | 2000 pF @ 15 V | 4.5V, 10V | ±20V | - | - | - | - | - | DMN3009 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 3.4W (Ta) | N-Channel | ||||
| FQPF7N65C | onsemi | MOSFET N-CH 650V 7A TO220F | 유품40761 pcs | FQPF7N65C.pdf | 650 V | 7A (Tc) | 1.4Ohm @ 3.5A, 10V | 4V @ 250µA | 36 nC @ 10 V | 1245 pF @ 25 V | 10V | ±30V | - | - | - | - | - | FQPF7 | Tube | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-3 | 52W (Tc) | N-Channel | ||||
| STS12NH3LL | STMicroelectronics | MOSFET N-CH 30V 12A 8SO | 유품5030 pcs | STS12NH3LL.pdf | 30 V | 12A (Tc) | 10.5mOhm @ 6A, 10V | 1V @ 250µA | 12 nC @ 4.5 V | 965 pF @ 25 V | 4.5V, 10V | ±16V | - | - | - | - | - | STS12 | Tape & Reel (TR) | - | STripFET™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 2.7W (Tc) | N-Channel | ||||
| DMN3061SW-13 | Diodes Incorporated | MOSFET BVDSS: 25V~30V SOT323 T&R | 유품32127 pcs | DMN3061SW-13.pdf | 30 V | 2.7A (Ta) | 60mOhm @ 3.1A, 10V | 1.8V @ 250µA | 3.5 nC @ 4.5 V | 278 pF @ 15 V | 3.3V, 10V | ±20V | - | - | - | - | - | DMN3061 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 | 490mW (Ta) | N-Channel | ||||
| IPP50R350CPXKSA1 | Infineon Technologies | MOSFET N-CH 550V 10A TO220-3 | 유품5225 pcs | IPP50R350CPXKSA1.pdf | 550 V | 10A (Tc) | 350mOhm @ 5.6A, 10V | 3.5V @ 370µA | 25 nC @ 10 V | 1020 pF @ 100 V | 10V | ±20V | - | - | - | - | - | IPP50R | Tube | - | CoolMOS™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 89W (Tc) | N-Channel | ||||
| IPD33CN10NGATMA1 | Infineon Technologies | MOSFET N-CH 100V 27A TO252-3 | 유품64980 pcs | IPD33CN10NGATMA1.pdf | 100 V | 27A (Tc) | 33mOhm @ 27A, 10V | 4V @ 29µA | 24 nC @ 10 V | 1570 pF @ 50 V | 10V | ±20V | - | - | - | - | - | IPD33CN10 | Tape & Reel (TR) | - | OptiMOS™ | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 58W (Tc) | N-Channel | ||||
| IRFS7530TRL7PP | Infineon Technologies | MOSFET N CH 60V 240A D2PAK | 유품13154 pcs | IRFS7530TRL7PP.pdf | 60 V | 240A (Tc) | 1.4mOhm @ 100A, 10V | 3.7V @ 250µA | 354 nC @ 10 V | 12960 pF @ 25 V | 6V, 10V | ±20V | - | - | - | - | - | IRFS7530 | Tape & Reel (TR) | - | HEXFET®, StrongIRFET™ | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7 | 375W (Tc) | N-Channel | ||||
| PJE8404_R1_00001 | Panjit International Inc. | 30V N-CHANNEL ENHANCEMENT MODE M | 유품42030 pcs | PJE8404_R1_00001.pdf | 30 V | 600mA (Ta) | 220mOhm @ 600mA, 4,5V | 1.3V @ 250µA | 1.5 nC @ 4.5 V | 93 pF @ 15 V | 1.8V, 4.5V | ±8V | - | - | - | - | - | PJE8404 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 | 300mW (Ta) | N-Channel | ||||
| RD3U040CNTL1 | Rohm Semiconductor | MOSFET N-CH 250V 4A TO252 | 유품2474 pcs | 250 V | 4A (Tc) | 1.3Ohm @ 2A, 10V | 5.5V @ 1mA | 8.5 nC @ 10 V | 350 pF @ 25 V | 10V | ±30V | - | - | - | - | - | RD3U040 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 29W (Tc) | N-Channel | |||||
| STD7NM50N | STMicroelectronics | MOSFET N-CH 500V 5A DPAK | 유품3990 pcs | STD7NM50N.pdf | 500 V | 5A (Tc) | 780mOhm @ 2.5A, 10V | 4V @ 250µA | 12 nC @ 10 V | 400 pF @ 50 V | 10V | ±25V | - | - | - | - | - | STD7 | Tape & Reel (TR) | - | MDmesh™ II | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 45W (Tc) | N-Channel | ||||
| PMV100XPEAR | Nexperia USA Inc. | MOSFET P-CH 20V 2.4A TO236AB | 유품458750 pcs | PMV100XPEAR.pdf | 20 V | 2.4A (Ta) | 128mOhm @ 2.4A, 4.5V | 1.25V @ 250µA | 6 nC @ 4.5 V | 386 pF @ 10 V | 2.5V, 4.5V | ±12V | - | - | - | - | - | PMV100 | Tape & Reel (TR) | - | Automotive, AEC-Q100 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB | 463mW (Ta), 1.9W (Tc) | P-Channel | ||||
| FQAF8N80 | onsemi | MOSFET N-CH 800V 5.9A TO3PF | 유품4510 pcs | FQAF8N80.pdf | 800 V | 5.9A (Tc) | 1.2Ohm @ 2.95A, 10V | 5V @ 250µA | 57 nC @ 10 V | 2350 pF @ 25 V | 10V | ±30V | - | - | - | - | - | FQAF8 | Tube | - | QFET® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-3PF | 107W (Tc) | N-Channel | ||||
| BUK9E2R3-40E,127 | NXP Semiconductors / Freescale | MOSFET N-CH 40V 120A I2PAK | 유품5463 pcs | 40V | 120A (Tc) | 2.2 mOhm @ 25A, 10V | 2.1V @ 1mA | 87.8nC @ 5V | 13160pF @ 25V | 5V, 10V | ±10V | Tube | - | Lead free / RoHS Compliant | 1 (Unlimited) | 568-9871-5 934066413127 BUK9E2R340E127 |
- | - | N-Channel 40V 120A (Tc) 293W (Tc) Through Hole I2PAK | TrenchMOS™ | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 293W (Tc) | N-Channel | |||||
| HUF75321D3ST | onsemi | MOSFET N-CH 55V 20A TO252AA | 유품92000 pcs | HUF75321D3ST.pdf | 55 V | 20A (Tc) | 36mOhm @ 20A, 10V | 4V @ 250µA | 44 nC @ 20 V | 680 pF @ 25 V | 10V | ±20V | - | - | - | - | - | HUF75321 | Tape & Reel (TR) | - | UltraFET™ | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 93W (Tc) | N-Channel | ||||
| BSH205G2AR | Nexperia USA Inc. | MOSFET P-CH 20V 2.6A TO236AB | 유품27593 pcs | BSH205G2AR.pdf | 20 V | 2.6A (Ta) | 118mOhm @ 2.6A, 4.5V | 900mV @ 250µA | 7 nC @ 4.5 V | 421 pF @ 10 V | - | ±8V | - | - | - | - | - | BSH205 | Tape & Reel (TR) | - | Automotive, AEC-Q101, TrenchMOS™ | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB | 610mW (Ta), 10W (Tc) | P-Channel | ||||
| BSP135L6433HTMA1 | Infineon Technologies | MOSFET N-CH 600V 120MA SOT223-4 | 유품3627 pcs | BSP135L6433HTMA1.pdf | 600 V | 120mA (Ta) | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9 nC @ 5 V | 146 pF @ 25 V | 0V, 10V | ±20V | - | Depletion Mode | - | - | - | - | Tape & Reel (TR) | - | SIPMOS® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4-21 | 1.8W (Ta) | N-Channel | ||||
| BSS84-7 | Diodes Incorporated | MOSFET P-CH 50V 130MA SOT23-3 | 유품4410 pcs | BSS84-7.pdf | 50 V | 130mA (Ta) | 10Ohm @ 100mA, 5V | 2V @ 1mA | - | 45 pF @ 25 V | 5V | ±20V | - | - | - | - | - | BSS84 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 300mW (Ta) | P-Channel | ||||
| IRFB4510GPBF | Infineon Technologies | MOSFET N CH 100V 62A TO-220AB | 유품4040 pcs | IRFB4510GPBF.pdf | 100 V | 62A (Tc) | 13.5mOhm @ 37A, 10V | 4V @ 100µA | 87 nC @ 10 V | 3180 pF @ 50 V | 10V | ±20V | - | - | - | - | - | - | Tube | - | HEXFET® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 140W (Tc) | N-Channel | ||||
| FDBL9401-F085T6 | onsemi | MOSFET N-CH 40V 58.4/240A 8HPSOF | 유품32089 pcs | FDBL9401-F085T6.pdf | 40 V | 58.4A (Ta), 240A (Tc) | 0.67mOhm @ 50A, 10V | 4V @ 290µA | 148 nC @ 10 V | 10000 pF @ 25 V | - | +20V, -16V | - | - | - | - | - | FDBL9401 | Tape & Reel (TR) | - | Automotive, AEC-Q101 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSFN | 8-HPSOF | 4.3W (Ta), 180.7W (Tc) | N-Channel | ||||
| IRFS17N20DTRL | Infineon Technologies | MOSFET N-CH 200V 16A D2PAK | 유품4743 pcs | IRFS17N20DTRL.pdf | 200 V | 16A (Tc) | 170mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50 nC @ 10 V | 1100 pF @ 25 V | 10V | ±30V | - | - | - | - | - | - | Tape & Reel (TR) | - | HEXFET® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 140W (Tc) | N-Channel | ||||
| YJL3400A | Yangzhou Yangjie Electronic Technology Co.,Ltd | N-CH MOSFET 30V 5.6A SOT-23-3L | 유품34906 pcs | YJL3400A.pdf | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
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IXFV14N80P | IXYS | MOSFET N-CH 800V 14A PLUS220 | 유품3876 pcs | IXFV14N80P.pdf | 800 V | 14A (Tc) | 720mOhm @ 500mA, 10V | 5.5V @ 4mA | 61 nC @ 10 V | 3900 pF @ 25 V | 10V | ±30V | - | - | - | - | - | IXFV14 | Tube | - | HiPerFET™, PolarHT™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3, Short Tab | PLUS220 | 400W (Tc) | N-Channel | |||
| 2SK543-4-TB-E | onsemi | MOSFET 30MA 20V | 유품4870 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | - | * | - | - | - | - | - | - | - | |||||
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IRFH8324TR2PBF | Infineon Technologies | MOSFET N-CH 30V 23A/90A PQFN | 유품77110 pcs | IRFH8324TR2PBF.pdf | 30 V | 23A (Ta), 90A (Tc) | 4.1mOhm @ 20A, 10V | 2.35V @ 50µA | 31 nC @ 10 V | 2380 pF @ 10 V | 4.5V, 10V | ±20V | - | - | - | - | - | - | Tape & Reel (TR) | - | HEXFET® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 3.6W (Ta), 54W (Tc) | N-Channel | |||
| RW4E065GNTCL1 | Rohm Semiconductor | NCH 30V 6.5A, HEML1616L7, POWER | 유품2490 pcs | 30 V | 6.5A (Ta) | 22.5mOhm @ 6.5A, 10V | 2.5V @ 1mA | 4.3 nC @ 10 V | 260 pF @ 15 V | 4.5V, 10V | ±20V | - | - | - | - | - | RW4E065 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-PowerUFDFN | DFN1616-7T | 1.5W (Ta) | N-Channel | |||||
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IPB240N03S4LR8ATMA1928 | Infineon Technologies | N-CHANNEL POWER MOSFET | 유품4911 pcs | 30 V | 240A (Tc) | 0.76mOhm @ 100A, 10V | 2.2V @ 230µA | 380 nC @ 10 V | 26000 pF @ 25 V | 4.5V, 10V | ±16V | - | - | - | - | - | - | Bulk | - | OptiMOS™ | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 300W (Tc) | N-Channel | ||||
| SIRA20DP-T1-RE3 | Vishay Siliconix | MOSFET N-CH 25V 81.7A/100A PPAK | 유품66820 pcs | SIRA20DP-T1-RE3.pdf | 25 V | 81.7A (Ta), 100A (Tc) | 0.58mOhm @ 20A, 10V | 2.1V @ 250µA | 200 nC @ 10 V | 10850 pF @ 10 V | 4.5V, 10V | +16V, -12V | - | - | - | - | - | SIRA20 | Tape & Reel (TR) | - | TrenchFET® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 6.25W (Ta), 104W (Tc) | N-Channel | ||||
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SPS04N60C3AKMA1 | Infineon Technologies | N-CHANNEL POWER MOSFET | 유품25000 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | - | * | - | - | - | - | - | - | - | ||||
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2SK1959-T1-AZ | Renesas Electronics America Inc | SMALL SIGNAL N-CHANNEL MOSFET | 유품62470 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | - | * | - | - | - | - | - | - | - | ||||
| BFL4037-1E | onsemi | MOSFET N-CH 500V 11A TO220F-3FS | 유품4410 pcs | BFL4037-1E.pdf | 500 V | 11A (Tc) | 430mOhm @ 8A, 10V | - | 48.6 nC @ 10 V | 1200 pF @ 30 V | 10V | ±30V | - | - | - | - | - | BFL40 | Tube | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-3FS | 2W (Ta), 40W (Tc) | N-Channel | ||||
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DMT10H009LFG-13 | Diodes Incorporated | MOSFET N-CH 100V 13A/50A PWRDI | 유품48199 pcs | DMT10H009LFG-13.pdf | 100 V | 13A (Ta), 50A (Tc) | 8.5mOhm @ 20A, 10V | 2.5V @ 250µA | 41 nC @ 10 V | 2361 pF @ 50 V | 4.5V, 10V | ±20V | - | - | - | - | - | DMT10 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | POWERDI3333-8 | 2W (Ta), 30W (Tc) | N-Channel | |||
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CPC3714C | IXYS Integrated Circuits Division | MOSFET N-CH 350V SOT89 | 유품4777 pcs | CPC3714C.pdf | 350 V | - | 14Ohm @ 240mA, 0V | - | - | 100 pF @ 25 V | 0V | ±15V | - | Depletion Mode | - | - | - | CPC3714 | Tube | - | - | MOSFET (Metal Oxide) | -55°C ~ 125°C (TJ) | Surface Mount | TO-243AA | SOT-89 | 1.4W (Ta) | N-Channel | |||
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BTS240AHKSA1 | Infineon Technologies | N-CHANNEL POWER MOSFET | 유품3048 pcs | 50 V | 58A (Tc) | 18mOhm @ 47A, 10V | 3.5V @ 1mA | - | 4300 pF @ 25 V | 10V | ±20V | - | - | - | - | - | - | Bulk | - | Automotive, AEC-Q101 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-218-3 | PG-TO218-3-1 | 170W | N-Channel | ||||
| AON7230 | Alpha & Omega Semiconductor Inc. | MOSFET N-CHANNEL 100V 47A 8DFN | 유품70380 pcs | AON7230.pdf | 100 V | 47A (Tc) | 11.5mOhm @ 13A, 10V | 2.5V @ 250µA | 45 nC @ 10 V | 2320 pF @ 50 V | 4.5V, 10V | ±20V | - | - | - | - | - | AON72 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-DFN-EP (3.3x3.3) | 54W (Tc) | N-Channel | ||||
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BUK6213-30C,118 | Nexperia USA Inc. | NEXPERIA BUK6213-30C - 47A, 30V, | 유품148500 pcs | 30 V | 47A (Tc) | 14mOhm @ 10A, 10V | 2.8V @ 1mA | 19.5 nC @ 10 V | 1108 pF @ 25 V | 10V | ±16V | - | - | - | - | - | - | Bulk | - | Automotive, AEC-Q101, TrenchMOS™ | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | ||||
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IXTH22N50P | IXYS | MOSFET N-CH 500V 22A TO247 | 유품43266 pcs | IXTH22N50P.pdf | 500 V | 22A (Tc) | 270mOhm @ 11A, 10V | 5.5V @ 250µA | 50 nC @ 10 V | 2630 pF @ 25 V | 10V | ±30V | - | - | - | - | - | IXTH22 | Tube | - | Polar | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 350W (Tc) | N-Channel | |||
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IXFH120N25X3 | IXYS | MOSFET N-CH 250V 120A TO247 | 유품39338 pcs | IXFH120N25X3.pdf | 250 V | 120A (Tc) | 12mOhm @ 60A, 10V | 4.5V @ 4mA | 122 nC @ 10 V | 7870 pF @ 25 V | 10V | ±20V | - | - | - | - | - | IXFH120 | Tube | - | HiPerFET™, Ultra X3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 520W (Tc) | N-Channel | |||
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IPS70N10S3L-12 | Infineon Technologies | MOSFET N-CH 1TO251-3 | 유품3676 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | IPS70N | Tube | - | - | - | - | - | - | - | - | - | ||||
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IPC60R099C6UNSAWNX6SA1 | Infineon Technologies | MOSFET N-CH BARE DIE | 유품4172 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | IPC60R | Bulk | - | - | - | - | - | - | - | - | - | ||||
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APT11N80BC3G | Microchip Technology | MOSFET N-CH 800V 11A TO247 | 유품35619 pcs | APT11N80BC3G.pdf | 800 V | 11A (Tc) | 450mOhm @ 7.1A, 10V | 3.9V @ 680µA | 60 nC @ 10 V | 1585 pF @ 25 V | 10V | ±20V | - | - | - | - | - | APT11N80 | Tube | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 156W (Tc) | N-Channel | |||
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IRF3315PBF | International Rectifier | MOSFET N-CH 150V 23A TO220AB | 유품4810 pcs | 150 V | 23A (Tc) | 70mOhm @ 12A, 10V | 4V @ 250µA | 95 nC @ 10 V | 1300 pF @ 25 V | - | ±20V | - | - | - | - | - | - | Bulk | - | HEXFET® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 94W (Tc) | N-Channel | ||||
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DMJ70H1D3SJ3 | Diodes Incorporated | MOSFET N-CH 700V 4.6A TO251 | 유품4296 pcs | DMJ70H1D3SJ3.pdf | 700 V | 4.6A (Tc) | 1.3Ohm @ 2.5A, 10V | 4V @ 250µA | 13.9 nC @ 10 V | 351 pF @ 50 V | 10V | ±30V | - | - | - | - | - | DMJ70 | Tube | - | - | MOSFET (Metal Oxide) | -55°C ~ 155°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 | 41W (Tc) | N-Channel | |||
| FQA28N50-ON | onsemi | 28.4A, 500V, 0.16OHM, N-CHANNEL | 유품20250 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | - | * | - | - | - | - | - | - | - | |||||
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IRF9Z34NL | Infineon Technologies | MOSFET P-CH 55V 19A TO262 | 유품5210 pcs | IRF9Z34NL.pdf | 55 V | 19A (Tc) | 100mOhm @ 10A, 10V | 4V @ 250µA | 35 nC @ 10 V | 620 pF @ 25 V | 10V | ±20V | - | - | - | - | - | - | Tube | - | HEXFET® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 68W (Tc) | P-Channel | |||
| SIRA84BDP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 22A/70A PPAK SO8 | 유품224990 pcs | SIRA84BDP-T1-GE3.pdf | 30 V | 22A (Ta), 70A (Tc) | 4.6mOhm @ 15A, 10V | 2.4V @ 250µA | 32 nC @ 10 V | 1050 pF @ 15 V | 4.5V, 10V | +20V, -16V | - | - | - | - | - | SIRA84 | Tape & Reel (TR) | - | TrenchFET® Gen IV | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 3.7W (Ta), 36W (Tc) | N-Channel | ||||
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IXFH40N50Q2 | IXYS | MOSFET N-CH 500V 40A TO247AD | 유품3620 pcs | IXFH40N50Q2.pdf | 500 V | 40A (Tc) | 160mOhm @ 500mA, 10V | 4.5V @ 4mA | 110 nC @ 10 V | 4850 pF @ 25 V | 10V | ±30V | - | - | - | - | - | IXFH40 | Tube | - | HiPerFET™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 560W (Tc) | N-Channel | |||
| P3M12025K4 | PN Junction Semiconductor | SICFET N-CH 1200V 112A TO-247-4 | 유품35044 pcs | P3M12025K4.pdf | 1200 V | 112A | 35mOhm @ 50A, 15V | 2.2V @ 50mA (Typ) | - | - | 15V | +19V, -8V | - | - | - | - | - | - | Tube | - | P3M | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 577W | N-Channel | ||||
| TK3A90E,S4X | Toshiba Semiconductor and Storage | PB-F POWER MOSFET TRANSISTOR TO- | 유품45359 pcs | 900 V | 2.5A (Ta) | 4.6Ohm @ 1.3A, 10V | 4V @ 250µA | 15 nC @ 10 V | 650 pF @ 25 V | 10V | ±30V | - | - | - | - | - | - | Tube | - | - | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | |||||
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YJD80N03B | Yangjie Technology | TO-252 N 30V 80A Transistors FE | 유품250000 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |